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DS1225Y DATASHEET PDF

SEMICONDUCTOR. DSY. 64K Nonvolatile SRAM. PIN ASSIGNMENT. FEATURES. 10 years minimum data retention in the absence of external power. CC. DSY Datasheet, DSY 64k Nonvolatile SRAM Datasheet, buy DSY DSY datasheet, DSY pdf, DSY data sheet, datasheet, data sheet, pdf, Dallas Semiconductor, 64K Nonvolatile SRAM.

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During power—up, when VCC rises above approximately 3. All address inputs must be kept valid throughout the write cycle.

There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

During power-up, when VCC rises above approximately 3. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output buffers remain in a high-impedance state during this period.

If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high impedance state during this period.

Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery backup mode. Data is maintained in the absence of VCC without any additional dattasheet circuitry. Valid data will be available to the eight data output drivers within tACC Access Time after the last address input signal is stable, providing that CE and OE access times are also satisfied.

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As VCC falls below approximately 3.

Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. WE must return to the high state for a minimum recovery time tWR before another cycle can be initiated.

Ds1225y datasheet pdf

Data is maintained in the absence of VCC without any additional support circuitry. All AC and DC electrical characteristics are valid over the full operating temperature range. In a power down condition the voltage on any pin may not exceed the voltage on VCC. The later-occurring falling edge of CE or WE will determine the start of the write cycle. DM Quad 2-Input Exclusive.

The expected tDR is defined as starting at the date of manufacture. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The expected tDR is defined as starting at the date of manufacture.

All voltages are referenced to ground.

DS1225Y-200+

Storage Temperature Lead Temperature soldering, 10s Note: If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state during this datasheey. AA designates the year of manufacture. Documents Flashcards Grammar checker. BB designates the week of manufacture. BB designates the week of manufacture.

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DSY Datasheet pdf – 64K Nonvolatile SRAM – Dallas Semiconductor

As VCC falls below approximately 3. Vatasheet is high for a read cycle. All voltages are referenced to ground. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing. Package drawings may show a different suffix character, but datashete drawing pertains to the package regardless of RoHS status.

The write cycle is terminated by the earlier rising edge of CE or WE. WE is high for a read cycle. The latter occurring falling edge of CE or WE will determine the start of the write cycle. AA designates the year of manufacture.

EDIP is wave or hand soldered only. Why bother to spell words correctly. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output buffers remain in a high impedance state during this period. If the CE high transition occurs prior to or dwtasheet with the WE high transition, the output buffers remain in a high-impedance state during this period.